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| 1N914 FAST SWITCHING DIODE DO - 35 .020 TYP. (0.51) 1.083(27.5) MIN FEATURES High reliability High conductance Fast switching speed (trr4ns) APPLICATIONS For general purpose swiching applications CONSTRUCTION Silicon epitaxial planar .150(3.8) MAX .079 MAX (2.0) 1.083(27.5) MIN Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATING Parameter Non repetitive peak reverse voltage (TJ=25) Test Conditions Symbol VRM VRRM Value 100 Unit V V Repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Forward current Average rectified current Non repetitive peak forward surge current Power dissipation Storge temperature range 75 75 VRWM VR VR(RMS) IF 75 53 V V V mA mA A A mW 300 200 1 Half wave rectification with resistive load and f>50MHz t=1s t=1us IFAV IFSM IFSM Pd TsTg 4 500 I=4mm TL=25 -55 ~ +175 MAXIMUM THERMAL RESISTANCE Parameter Junction ambient (TJ=25) Test Conditions I=4mm TL=constant Symbol RthJA Value 300 Unit K/W ELECTRICAL CHARACTERISTICS Parameter Forward voltage Peak reverse current Breakdown voltage Diode capacitance Reverse recovery time TJ=25 Test Conditions IF=10mA VR=20V VR=20V, Tj=150 VR=75V Symbol VF IR IR IR VR CD trr 100 4 4 Min Typ Max 1 25 50 5 Unit V nA uA uA V pF ns IR=100uA VR=0, f=1MHZ IF=10mA to IR=1mA,VR=6V,RL=100 ~ 419 ~ RATING AND CHARACTERISTIC CURVES 1N914 FIG. 1 - MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT VS. AMBIENT TEMPERATURE 100 600 FIG. 2 -FORWARD CURRENT VS.FORWARD VOLTAGE TJ=25C TYPICAL IF (m A) 50 400 IF (m A) TJ=25C TYPICAL VALUES 200 0 0 100 Tamb(C) 200 0 0 1 VF (V) 2 TJ=25C MAXIMUM VALUES FIG.3-REVERSE CURRENT VS. JUNCTION TEMPERATURE 1000 VR=75V MAXIMUM VALUES 100 1.0 1.2 FIG. 4 -DIODE CAPACITANCE VS. REVERSE VOLTAGE (TYPICAL VALUES) IR (uA) 10 VR=75V TYPICAL VALUES Cd (pF) 0.8 1 0.6 VR=20V TYPICAL VALUES 0.1 0.4 0 0.01 0 100 TJ((C) 200 10 VR(C) 20 f=1MHZ,TJ=25C ~ 420 ~ |
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